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Triac ·With TO-220AB non insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in l |
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Silicon PNP Power Transistor Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A ; VCE= -5V fT Current-Gain— |
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INCHANGE |
PNP Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA -1.5 V VBE(sat) Base-Emitter Satura |
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NPN Transistor 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=300mA; IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=100mA; IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC=300mA; IB= 30mA ICBO Collector Cutoff Current VCB= 600V ; IE= |
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Inchange Semiconductor |
2SB1217 ss otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitt |
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PNP Transistor Collector-Emitter Breakdown Voltage IC= -5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Bas |
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PNP Transistor age IC= -10mA; RBE= ∞ -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -2mA -2.5 V ICBO Col |
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Inchange Semiconductor |
Silicon PNP Power Transistor PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -150mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -150mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown |
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PNP Transistor AMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA VBE(sat) Base-Emitter Saturation Voltage |
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PNP Transistor er Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Satu |
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Inchange Semiconductor |
Silicon PNP Power Transistor Emitter breakdown voltage IC=-1mA -160 V BVEBO Emitter-Base breakdown voltage IE=-50uA -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IE |
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Inchange Semiconductor |
Silicon PNP Power Transistor OL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -200mA VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -200mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakd |
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Inchange Semiconductor |
Silicon PNP Power Transistor tter Saturation Voltage IC= -2A; IB= -100mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -100mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Bas |
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Inchange Semiconductor |
Silicon PNP Power Transistor mitter Saturation Voltage IC= -1A; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -50mA V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Bas |
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INCHANGE |
NPN Transistor IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.1 A; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage |
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fast Recovery Rectifier ·1200V blocking voltage ·Ultrafast recovery ·Ultrasoft recovery ·Very low IRRM ·Very low Qrr ·Specified at operating conditions ·Designed and qualified for industrial level ·Minimum Lot-to-Lot variations for robust device performance and reliable ope |
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INCHANGE |
Triac ·With TO-220AB non insulated package ·Suitables for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in l |
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INCHANGE |
Triac ·With TO-220AB non insulated package ·Suitable for general purpose AC switching. Which can be used as an ON/OFF function in applications such as static relays, heating regulation,induction motor starting circuits. Or for phase control operation in li |
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INCHANGE |
PNP Transistor nless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA, IE= 0 -100 V VCE(sat) Collector-Emitter Satu |
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INCHANGE |
PNP Transistor PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA VBE(sat) Base-Emitter Saturation Volta |
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