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2SB1275 |
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| Part Number | 2SB1275 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Suitable for middle power drivers ·High voltage:VCEO=-160V ·Complementary NPN types:2SD1918 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
Emitter breakdown voltage IC=-1mA
-160
V
BVEBO Emitter-Base breakdown voltage
IE=-50uA
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -100mA
-2.0 V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -1A; IB= -100mA VCB= -120V; IE= 0 VEB= -4V; IC= 0
-1.5 V -1.0 μA -1.0 μA
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
56
180
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
30
pF
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -10V,f= 100MHz
50
MHz
NOTICE： ISC reserves the rights to make changes of t... |
| Document |
 2SB1275 Data Sheet
PDF 213.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1270 |
Sanyo Semicon Device |
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| 2 | 2SB1271 |
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| 3 | 2SB1272 |
SavantIC |
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| 4 | 2SB1272 |
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| 5 | 2SB1273 |
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