No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
NPN Transistor www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2STW100 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-E |
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INCHANGE |
NPN Transistor ration Voltage IC= 3A; IB= 375mA ICEO Collector Cutoff Current VCE= 30V ; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC=20mA ; VCE=4V hFE-2 DC Current Gain IC=1A ; VCE=4V 2ST31A MIN TYP. MAX UNIT 60 V 1.2 |
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INCHANGE |
NPN Transistor CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 150mA; IC= 0 VCEO(sus) Collector-Emitter Voltage (IB = 0 ) Sustaining IC = 10 mA, ICEO Collector Cut-off Current (IB |
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Inchange Semiconductor |
Silicon NPN Power Transistor Saturation Voltage IC= 1.0A; IB= 50mA VCE(sat)-3NOTE Collector-Emitter Saturation Voltage IC= 2.0A; IB= 50mA VCE(sat)-4NOTE Collector-Emitter Saturation Voltage IC= 6.0A; IB= 150mA VCE(sat)-5NOTE Collector-Emitter Saturation Voltage IC= 6A; IB= 3 |
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INCHANGE |
PNP Transistor w.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2STW200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emit |
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INCHANGE |
NPN Transistor iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2STP535FP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Volt |
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