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2STW100 |
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| Part Number | 2STW100 |
| Manufacturer | INCHANGE |
| Description | ·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type 2STW200 ·Minimum Lot-to-Lot variations for ... |
| Features |
www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2STW100
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA
VCE(sat)3 Collector-Emitter Saturation Voltage IC= 20A ,IB= 80mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A ,IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 3... |
| Document |
 2STW100 Data Sheet
PDF 196.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2STW100 |
ST Microelectronics |
Power transistors |
|
| 2 | 2STW1693 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 3 | 2STW1695 |
ST Microelectronics |
High Power PNP Epitaxial Planar Bipolar Transistor |
|
| 4 | 2STW200 |
ST Microelectronics |
Power Transistor |
|
| 5 | 2STW200 |
INCHANGE |
PNP Transistor |
|