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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers isc Product Spec |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.21Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMU |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMU |
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INCHANGE |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation |
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INCHANGE |
N-Channel MOSFET ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMU |
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INCHANGE |
N-Channel MOSFET ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor 125N10T ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UN |
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INCHANGE |
N-Channel MOSFET ·TrenchFET® Power MOSFET ·175℃ Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·D Primary Side Switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤2.3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectificat |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤2.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for synchronous rectification ·ABSOLUTE MAXIMUM R |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode |
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INCHANGE |
N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTIO |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤125mΩ. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Reg |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation D |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters, motor drivers, relay drivers isc Product Spec |
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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM |
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INCHANGE |
N-Channel MOSFET ·With TO-252(DPAK) packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications |
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