| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hynix Semiconductor |
(HY29DS322 / HY29DS323) Simultaneous Read/Write Flash Memory n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one ba |
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Hynix Semiconductor |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS sta |
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Hynix Semiconductor |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz) – |
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Hynix Semiconductor |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for |
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Hynix Semiconductor |
512Mb NAND FLASH and figure 2) Modify Block Replacement 1) Add x16 Characteristics 2) Modify read2 operation (sequential row read) 3) Add AC Characteristics - tOH : RE or CE High to O |
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Hynix Semiconductor |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 70 ns n Low Power Consumption – 15 mA typical active read current – 30 mA typical program/erase current – 5 µA maximum CMOS sta |
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Hynix Semiconductor |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for |
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Hynix Semiconductor |
32Gb NAND FLASH SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications MULTIPLANE ARCHITECTURE - Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time. |
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Hynix Semiconductor |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.DataSheet4U.com - Pinout compatibility for all densities FAST BLOCK ERASE - Block |
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Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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Hynix Semiconductor |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte mode, 28 mA typical in word mode – 30 mA typical prog |
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Hynix Semiconductor |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions Ultra-low Power Consumption (Typical Values At 5 Mhz) – |
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Hynix Semiconductor |
32 Mbit (2M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consum |
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Hynix Semiconductor |
32 Mbit (2M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consum |
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Hynix Semiconductor |
32 Mbit (2M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consum |
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Hynix Semiconductor |
32 Mbit (2M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consum |
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Hynix Semiconductor |
32 Mbit (2M x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time versions for full voltage range operation Ultra-low Power Consum |
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Hynix Semiconductor |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory n Single Power Supply Operation – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70 and 90 ns access time versions for full voltage range operation – 55 ns access time version for |
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Hynix Semiconductor |
(HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory 2) Change AC Conditions table 3) Add tWW parameter ( tWW = 100ns, min) - Texts & Figures are added. - tWW is added in AC timing characteristics table. 4) Edit Copy Back Program operation step 5) Edit System Interface Using CE don’t care Figures. 6) |
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Hynix Semiconductor |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ |
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