| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SB647 10 320 — –1 Typ Max Unit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 |
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Hitachi Semiconductor |
Silicon PNP Transistor nditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –150 mA VCB = –10 V, IE = 0, f = |
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Hitachi |
2SB648 |
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Hitachi |
2SB648 |
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Hitachi Semiconductor |
PNP Transistor nit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 V, I C = –150 mA*2 T |
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Hitachi Semiconductor |
Silicon PNP Transistor nditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA VCE = –5 V, I C = –150 mA VCE = –5 V, I C = –150 mA VCB = –10 V, IE = 0, f = |
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Hitachi Semiconductor |
PNP Transistor nit Test conditions — — — –10 200 — –1 V V V V µA I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, I C = –150 mA*2 VCE = –5 V, I C = –500 mA*2 I C = –500 mA, I B = –50 mA*2 VCE = –5 V, I C = –150 mA*2 T |
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Hitachi |
Silicon PNP Epitaxial Transistor |
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Hitachi |
Silicon PNP Epitaxial Transistor |
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Hitachi |
Silicon PNP Transistor , RBE = ∞ IE = –10 µA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA VCE = –5 V, IC = –1 mA IC = –30 mA, IB = –3 mA VCE = –5 V, IC = –10 mA VCE = –10 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz –180 — –120 — –5 — — — — — — — 140 4.5 –180 — |
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Hitachi |
Silicon PNP Transistor , RBE = ∞ IE = –10 µA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –10 mA VCE = –5 V, IC = –1 mA IC = –30 mA, IB = –3 mA VCE = –5 V, IC = –10 mA VCE = –10 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz –180 — –120 — –5 — — — — — — — 140 4.5 –180 — |
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