No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25° |
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Hitachi Semiconductor |
2SJ114 |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vo |
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Hitachi |
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline |
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Hitachi Semiconductor |
P-Channel MOSFET • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline |
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Hitachi Semiconductor |
P-Channel MOSFET • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute |
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Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SJ181( |
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Hitachi |
Silicon P Channel MOS FET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220CFM D 12 3 1. Gate G 2. Drain 3. Source S Nove |
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Hitachi Semiconductor |
P-Channel MOSFET |
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Hitachi Semiconductor |
P-Channel MOSFET • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) I |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ533 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ548 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Ga |
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Hitachi Semiconductor |
Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25°C) I |
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