| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
2SC2611 current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collecto |
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Hitachi Semiconductor |
Silicon NPN Transistor B dB dB Unit V V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f |
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Hitachi Semiconductor |
2SC1906 0 — —V IC = 3 mA, RBE = ∞ — —V IE = 10 µA, IC = 0 — — 1000 1.0 0.2 0.5 — — 2.0 1.0 µA MHz pF V VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA 10 25 ps VCB = 10 V, IC = 10 |
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Hitachi Semiconductor |
2SC3374 |
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Hitachi Semiconductor |
Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE* |
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Hitachi Semiconductor |
Silicon NPN Transistor ctor to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg 60 10 V V V pF MHz µS µS µS VCE = 3 V, |
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Hitachi Semiconductor |
Silicon NPN Transistor 0 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz f OSC = 230 Mhz (0 dBm), f out = 30 MHz Conversion gain Noise figure Note: Marking is “HC”. CG NF — — 2 |
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Hitachi Semiconductor |
NPN TRANSISTOR — — — 0.5 0.5 320 0.2 0.75 — 3.5 10 — — — — µS V V MHz pF dB kΩ × 10 –6 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE |
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Hitachi Semiconductor |
2SC5252 • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO –3P •FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 www.DataSheet4U.com 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collecto |
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HITACHI |
2SC4934 —————————————————— www.DataSheet4U.com 2SC4934 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CE |
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Hitachi Semiconductor |
Silicon NPN Transistor E = 0 VCE = 3 V, IC =10 mA VCE = 3 V, I C = 500 mA*2 I C = 150 mA, I B = 15 mA*2 VCE = 3 V, IC = 10 mA Typ — — — — — — 0.2 0.64 35 35 4 — 60 10 — — DC current tarnsfer ratio hFE* hFE Collector to emitter saturation voltage VCE(sat) Base to emitt |
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Hitachi |
Silicon NPN Triple Diffused Planar Transistor • High speed switching 0.5 µs Max • High breakdown voltage VCBO = 1500 V • Isolated package; TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC4692 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to |
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Hitachi Semiconductor |
2SC4367 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Co |
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Hitachi |
NPN Transistor |
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Hitachi Semiconductor |
Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE* |
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Hitachi Semiconductor |
Silicon NPN Transistor or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (mA) Typical Output Characte |
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Hitachi Semiconductor |
2SC2278 |
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Hitachi Semiconductor |
2SC1775 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, I C = 50 µA, Rg = 50 kΩ f = 10 Hz f=1 kHz Typ — — — — — — — 200 1.6 — 90 — — DC current transfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturat |
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Hitachi Semiconductor |
2SC2979 7 — — — — — — — — — — — — — — — Max Unit —V —V —V 100 µA 100 µA — — 1.0 V 1.5 V 1.0 µs 3.0 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = 0.9 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 7 |
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Hitachi Semiconductor |
Silicon NPN Transistor current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 — — — V V MHz VCE = 2 V, IC = 1.5 A (pulse test) I C = 2 A, I |
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