C4367 Hitachi Semiconductor 2SC4367 Datasheet, en stock, prix

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C4367

Hitachi Semiconductor
C4367
C4367 C4367
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Part Number C4367
Manufacturer Hitachi Semiconductor
Description 2SC4367 Silicon NPN Epitaxial Application High Frequency amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltag...
Features µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) 24 140 120 100 30 400 18 80 12 60 200 40 6 IB = 20 µA 0 50 100 150 Ambient Temperature Ta (°C) 0 4 8 12 16 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 100 50 Collector Current IC (mA) DC Current Transfer Ratio hFE VCE = 10 V Pulse 1,000 500 DC Current Transfer Ratio vs. Collector Cu...

Document Datasheet C4367 Data Sheet
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