| No. | Partie # | Fabricant | Description | Fiche Technique |
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Hitachi Semiconductor |
Silicon PNP Transistor Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 — — — V V MHz VCE = –2 V, IC = –1.5 A (Pulse |
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Hitachi Semiconductor |
2SA673 — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 0.1 –0.1 800 Min Typ Max — — — –0.1 –0.1 800 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA*2 I C = –10 mA, I B = –1 mA*2 Min –90 –90 –5 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB = |
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Hitachi Semiconductor |
2SA1029 — — — — — — — — 280 3.3 Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I |
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Hitachi Semiconductor |
2SA893A oise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100 |
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Hitachi Semiconductor |
2SA893 oise figure Cob — 1.8 — — 1.8 NF — 2 10 — 2 Note: 1. The 2SA893/A is grouped by hFE as follows. DE 250 to 500 400 to 800 Max Unit Test conditions —V IC = –1 mA, RBE = ∞ — µA –0.5 µA 800 –0.75 V –0.5 V — MHz — pF VCB = –75 V, IE = 0 VCB = –100 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figuer V(BR)EBO I CBO I EBO hFE* 160 — — — — — — VCE(sat) VBE fT Cob NF V V MHz pF dB dB I C = –10 mA, IB = –1 mA VCE = –12 |
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Hitachi Semiconductor |
Silicon PNP Transistor 800 –0.2 Min –90 –90 –5 — — 250 — — — — — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1085 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor transfer ratio DC current transfer ratio Base to emitter voltage V(BR)EBO I CBO VCE(sat) hFE1* 1 hFE2 VBE Notes: 1. The 2SA1390 is grouped by hFE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 See characteristic curves of 2SA673. |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = |
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Hitachi Semiconductor |
Silicon PNP Transistor — Max — — — –20 — 200 — 2SA743A Min –80 –80 –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — — –20 200 — V V MHz Unit V V V µA Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCE = –50 V, RBE = 1 kΩ VCE = –80 V, RBE = 1 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 E 400 to 800 V(BR)EBO I CBO I EBO hFE* 160 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = –10 mA, IB = –1 mA VCE = –12 V |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, f = 10 Hz I C = –50 µA Rg = 50 kΩ f = 1 kHz Typ — — — — — — — 120 1.8 — –90 — — DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to em |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor — — — — — — 280 3.3 — Max — — — –0.5 –0.5 320 –0.8 –0.2 — 4.0 5 V V MHz pF dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V |
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Hitachi Semiconductor |
Silicon PNP Transistor — Typ Max — — — — — — — — — — –0.1 –0.1 800 –0.2 2SA1082 Min Typ Max — — — –0.1 –0.1 800 –0.2 V V Unit Test conditions V V µA µA IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –50 V, I E = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor –0.1 –0.1 800 Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –70 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA*2 I C = –10 mA, I B = –1 mA*2 Min –90 –90 –5 — — 250 — — — — Typ — — — — |
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Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor tage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF 100 — — — — — V V MHz pF dB VCE = –12 V, IC = –2 mA I C = –10 mA, IB |
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