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2SA836 |
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| Part Number | 2SA836 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Collector to bas... |
| Features |
Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figuer V(BR)EBO I CBO I EBO hFE*
160 — — — — — —
VCE(sat) VBE fT Cob NF
V V MHz pF dB dB
I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCE = –12 V, IE = –2 mA VCB = –10 V, IE = 0, f = 1MHz VCE = –6 V, I C = –0.1mA, Rg = 10 kΩ f = 10 Hz f = 1 kHz Note: C 1. The 2SA836 is grouped by hFE as follows. D 250 to 500 160 to 320 2 2SA836 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 300 Typical Output Characteristics –10 –30 –25 –20 Collector ... |
| Document |
 2SA836 Data Sheet
PDF 32.79KB |
| Distributor | Stock | Price | Buy |
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