| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Harris Semiconductor |
N-Channel MOSFET • 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for S |
|
|
|
|
Harris Semiconductor |
N-Channel MOSFET |
|
|
|
|
Harris Semiconductor |
N-Channel MOSFET • 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for S |
|
|
|
|
Harris Semiconductor |
N-Channel MOSFET • 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for S |
|
|
|
|
Harris Semiconductor |
N-Channel MOSFET • 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for S |
|
|
|
|
Harris Semiconductor |
N-Channel MOSFET |
|
|
|
|
Harris Semiconductor |
N-Channel Power MOSFET |
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|
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|
Harris Semiconductor |
N-Channel Power MOSFET |
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|
|
Harris Semiconductor |
N-Channel Power MOSFETs |
|