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IRFD1Z3 |
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| Part Number | IRFD1Z3 |
| Manufacturer | Harris Semiconductor |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers ... |
| Features |
• 0.4A and 0.5A, 60V and 100V • rDS(ON) = 2.4Ω and 3.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive powe... |
| Document |
 IRFD1Z3 Data Sheet
PDF 57.16KB |
| Distributor | Stock | Price | Buy |
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