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HY ELECTRONIC DB3 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
DB3

HY ELECTRONIC
SILICON BIDIRECTIONAL DIACS

●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 150 mW DO-35(GLASS) .020 TYP. (0.51) 1.083(27.5) MIN hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The b
Datasheet



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