No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
Three quadrant triacs high commutation -state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 4 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) |
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NXP |
Three quadrant triacs guaranteed commutation RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0 |
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US Electronics |
High Temperature Through Hole Ceramic Resonators |
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NXP |
Three quadrant triacs guaranteed commutation C 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; |
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Fiducia |
Monochrome LCD ◆ 5 x 7 DOTS WITH CURSOR ◆ BUILT-IN CONTROLLER (KS0066 OR EQUIVALENT) ◆ 5 V POWER SUPPLY ◆ 1/16 DUTY CYCLE ◆ 4.2 V LED FORWARD VOLTAGE Supply Voltage Supply Current Input Voltage "HIGH" Level "LOW" Level "HIGH" Level "LOW" Level VDD-VSS IDD VIH VIL V |
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Fiducia |
Monochrome LCD ◆ 5 x 7 DOTS WITH CURSOR ◆ BUILT-IN CONTROLLER (KS0066 OR EQUIVALENT) ◆ 5 V POWER SUPPLY ◆ 1/16 DUTY CYCLE ◆ 4.2 V LED FORWARD VOLTAGE Supply Voltage Supply Current Input Voltage "HIGH" Level "LOW" Level "HIGH" Level "LOW" Level VDD-VSS IDD VIH VIL V |
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Samsung semiconductor |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM • Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V |
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HR |
2.00mm Pitch Wire to Board Connector 2H-3P A2002H-4P A2002H-5P A2002H-6P A2002H-7P A2002H-8P A2002H-9P A2002H-10P A2002H-11P A2002H-12P A2002H-13P A2002H-14P A2002H-15P Dimensions A 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 22.00 24.00 26.00 28.00 B 4.90 6.90 8.90 10.90 12 |
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NXP |
Three quadrant triacs guaranteed commutation System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths ≤ 92 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms I |
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NXP |
Three quadrant triacs high commutation sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 8 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for |
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Fiducia |
Monochrome LCD ◆ 5 x 7 DOTS WITH CURSOR ◆ BUILT-IN CONTROLLER (KS0066 OR EQUIVALENT) ◆ 5 V POWER SUPPLY ◆ 1/16 DUTY CYCLE ◆ 4.2 V LED FORWARD VOLTAGE Supply Voltage Supply Current Input Voltage "HIGH" Level "LOW" Level "HIGH" Level "LOW" Level VDD-VSS IDD VIH VIL V |
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Fiducia |
Monochrome LCD ◆ 5 x 7 DOTS WITH CURSOR ◆ BUILT-IN CONTROLLER (KS0066 OR EQUIVALENT) ◆ 5 V POWER SUPPLY ◆ 1/16 DUTY CYCLE ◆ 4.2 V LED FORWARD VOLTAGE Supply Voltage Supply Current Input Voltage "HIGH" Level "LOW" Level "HIGH" Level "LOW" Level VDD-VSS IDD VIH VIL V |
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Fiducia |
Monochrome LCD ◆ 5 x 7 DOTS WITH CURSOR ◆ BUILT-IN CONTROLLER (KS0066 OR EQUIVALENT) ◆ 5 V POWER SUPPLY ◆ 1/16 DUTY CYCLE ◆ 4.2 V LED FORWARD VOLTAGE Supply Voltage Supply Current Input Voltage "HIGH" Level "LOW" Level "HIGH" Level "LOW" Level VDD-VSS IDD VIH VIL V |
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Samsung semiconductor |
64Kx32-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0 |
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Rohm |
Monochrome image sensor heads 1) Signal amplifier is built in to the image sensor IC in order to increase immunity to external noise. 2) The LED light source is mounted on the same substrate as the sensor chip which makes it possible to package the device with lighter weight and |
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HR |
2.00mm Pitch Wire to Board Connector 2H-3P A2002H-4P A2002H-5P A2002H-6P A2002H-7P A2002H-8P A2002H-9P A2002H-10P A2002H-11P A2002H-12P A2002H-13P A2002H-14P A2002H-15P Dimensions A 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 22.00 24.00 26.00 28.00 B 4.90 6.90 8.90 10.90 12 |
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US Electronics |
Through Hole Ceramic Resonators |
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Samsung semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM • • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V+0.3V/-0.165V Power Supply. VDDQ Supply Voltage 3.3V+0 |
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Samsung semiconductor |
64Kx36/x32 Synchronous SRAM |
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Samsung semiconductor |
64Kx36/x32 Synchronous SRAM |
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