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K7A201800B |
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| Part Number | K7A201800B |
| Manufacturer | Samsung semiconductor |
| Description | The K7A203600B, K7A203200B and K7A201800B are 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organiz... |
| Features |
• Synchronous Operation. • 2 Stage Pipelined operation with 4 Burst. • On-Chip Address Counter. • Self-Timed Write Cycle. • On-Chip Address and Control Registers. • VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • 5V Tolerant Inputs Except I/O Pins. • Byte Writable Function. • Global Write Enable Controls a full bus-width write. • Power Down State via ZZ Signal. • LBO Pin allows a choice of either a interleaved burst or a linear burst. • Three Chip Enables for simple depth expansion with No Data Contnention ; 2cycle ... |
| Document |
 K7A201800B Data Sheet
PDF 273.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K7A203200A |
Samsung semiconductor |
64Kx32-Bit Synchronous Pipelined Burst SRAM |
|
| 2 | K7A203200B |
Samsung semiconductor |
64Kx36/x32 Synchronous SRAM |
|
| 3 | K7A203600A |
Samsung semiconductor |
64Kx36-Bit Synchronous Pipelined Burst SRAM |
|
| 4 | K7A203600B |
Samsung semiconductor |
64Kx36/x32 Synchronous SRAM |
|
| 5 | K7A161800A |
Samsung semiconductor |
512K x 36 / x32 & 1M x 18 Synchronous SRAM |
|