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HOOYI |
N-Channel Enhancement Mode MOSFET • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 40V/320A RDS(ON)=1.3 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247-3L S D G TO-3P-3L Applications • Power Management for Inverter Systems. D |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 40V/320A RDS(ON)=1.3 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-247-3L S D G TO-3P-3L Applications • Power Management for Inverter Systems. D |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching application • Power Management for Inverter Systems. Pin Description S D G |
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HOOYI |
600V N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : |
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