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HY5N60 |
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| Part Number | HY5N60 |
| Manufacturer | HOOYI |
| Description | 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics ... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : 2 Ω(Typ.) @VGS =10V 100% Avalanche Tested
HY5N60
BVDSS = 640 RDS(on) = 2 Ω ID = 5 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous... |
| Document |
 HY5N60 Data Sheet
PDF 3.18MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HY5N50FT |
HY ELECTRONIC |
500V / 5A N-Channel Enhancement Mode MOSFET |
|
| 2 | HY5N50T |
HY ELECTRONIC |
500V / 5A N-Channel Enhancement Mode MOSFET |
|
| 3 | HY5-P |
LEM |
Current Transducers HY 5 to 25-P |
|
| 4 | HY50-P |
LEM |
Current Transducer HY 50-P |
|
| 5 | HY5002 |
HAWYANG |
1-chip composed of high-current totem pole |
|