HARRIS HGT fiche technique

No.	Partie #	Fabricant	Description
1	HGTG20N60C3R	HARRIS	N-Channel IGBTs • 40A, 600V TJ = 25oC • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Description This family of IGBTs was de
2	HGT1S7N60C3DS	HARRIS	UFS Series N-Channel IGBT • 14A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB COLLECTOR (FLANGE)
3	HGTD7N60C3S	HARRIS	UFS Series N-Channel IGBT • 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices co
4	HGTD7N60C3	HARRIS	UFS Series N-Channel IGBT • 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices co
5	HGTP7N60C3	HARRIS	UFS Series N-Channel IGBT • 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices co
6	HGT1S20N60C3RS	HARRIS	N-Channel IGBTs • 40A, 600V TJ = 25oC • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Description This family of IGBTs was de
7	HGT1S20N60C3R	HARRIS	N-Channel IGBTs • 40A, 600V TJ = 25oC • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Description This family of IGBTs was de
8	HGTP20N60C3R	HARRIS	N-Channel IGBTs • 40A, 600V TJ = 25oC • 600V Switching SOA Capability • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns • Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs • Low Conduction Loss Description This family of IGBTs was de
9	HGTP7N60C3D	HARRIS	UFS Series N-Channel IGBT • 14A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB COLLECTOR (FLANGE)
10	HGT1S7N60C3D	HARRIS	UFS Series N-Channel IGBT • 14A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC TO-220AB COLLECTOR (FLANGE)
11	HGTP3N60C3D	Harris Corporation	UFS Series N-Channel IGBT • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H
12	HGT1S3N60C3D	Harris Corporation	UFS Series N-Channel IGBT • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H
13	HGT1S3N60C3DS	Harris Corporation	UFS Series N-Channel IGBT • 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTP3N60C3D, HGT1S3N60C3D, and H
14	HGTG12N60C3D	Harris Corporation	UFS Series N-Channel IGBT • • • • • 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode o Description The HGTG12N60C3D is a MOS gated high voltage switching device com
15	HGTG40N60B3	Harris	UFS Series N-Channel IGBT • 70A, 600V at TC = +25 C • Square Switching SOA Capability • Typical Fall Time - 160ns at +150oC • Short Circuit Rating • Low Conduction Loss o Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of