HGTD7N60C3S |
Part Number | HGTD7N60C3S |
Manufacturer | HARRIS |
Description | The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of ... |
Features |
• 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT is ideal for many high voltage switching applications operating at moderat... |
Document |
HGTD7N60C3S Data Sheet
PDF 221.98KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HGTD7N60C3 |
Fairchild Semiconductor |
14A/ 600V/ UFS Series N-Channel IGBTs | |
2 | HGTD7N60C3 |
HARRIS |
UFS Series N-Channel IGBT | |
3 | HGTD7N60C3S |
Fairchild Semiconductor |
UFS Series N-Channel IGBTs | |
4 | HGTD7N60C3S |
Intersil |
UFS Series N-Channel IGBTs | |
5 | HGTD7N60A4S |
Intersil Corporation |
600V/ SMPS Series N-Channel IGBT |