General Semiconductor AS3 fiche technique

No.	Partie #	Fabricant	Description
1	AS3024	General Semiconductor	PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY TE A P N 0.224(5.7) 0.208(4.3) 0.185(4.7) 0.169(4.3) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.110(2.8) 0.094(2.4) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) LEAD 1 0.205(5.2) 0.188(4.8) 0.098 (2.5) MIN. 0.390(9.9) 0.374(9.5) 0.087(2.2)
2	AS3524	General Semiconductor	PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY TE A P N 0.224(5.7) 0.208(4.3) 0.185(4.7) 0.169(4.3) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.110(2.8) 0.094(2.4) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) LEAD 1 0.205(5.2) 0.188(4.8) 0.098 (2.5) MIN. 0.390(9.9) 0.374(9.5) 0.087(2.2)
3	AS3028	General Semiconductor	PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY TE A P N 0.224(5.7) 0.208(4.3) 0.185(4.7) 0.169(4.3) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.110(2.8) 0.094(2.4) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) LEAD 1 0.205(5.2) 0.188(4.8) 0.098 (2.5) MIN. 0.390(9.9) 0.374(9.5) 0.087(2.2)
4	BAS31	Fairchild Semiconductor	High Voltage General Purpose Diode TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BAS31 350 2.8 357 Units mW mW/ °C °C/W ©1997 Fairchild Semiconductor Corporation BAS31 High Voltage General P
5	AS3528	General Semiconductor	PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY TE A P N 0.224(5.7) 0.208(4.3) 0.185(4.7) 0.169(4.3) 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.110(2.8) 0.094(2.4) 0.366(9.3) 0.343(8.7) 0.406(10.3) 0.382(9.7) LEAD 1 0.205(5.2) 0.188(4.8) 0.098 (2.5) MIN. 0.390(9.9) 0.374(9.5) 0.087(2.2)