| No. | Partie # | Fabricant | Description | Fiche Technique |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR8045 thru MBR80100R VRRM = 45 V - 100 V IF(AV) = 80 A DO-5 Package |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR8020 thru MBR8040R VRRM = 20 V - 40 V IF(AV) = 80 A DO-5 Package Max |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads revers |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reverse |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads revers |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT60020 thru MBRT60040R VRRM = 20 V - 40 V IF(AV) = 600 A Three Tower Package Maximum ratings, at Tj = 25 °C, u |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR40045CT thru MBR400100CTR VRRM = 45 V - 100 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads revers |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6020 thru MBR6040R VRRM = 20 V - 40 V IF = 60 A DO-5 Package Maximum |
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GeneSiC |
Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR3520 thru MBR3540R VRRM = 20 V - 40 V IF = 35 A DO-4 Package Maximum |
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GeneSiC |
(MBRT40020 - MBRT40040R) Silicon Power Schottky Diode • High Surge Capability • Types up to 100 V VRRM • Isolation Type Package Three Tower Package VRRM = 20 V - 100 V IF = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak |
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GeneSiC |
(MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak r |
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GeneSiC |
(MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak r |
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GeneSiC |
(MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak r |
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GeneSiC |
(MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak r |
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