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MBRF200150 |
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| Part Number | MBRF200150 |
| Manufacturer | GeneSiC |
| Description | Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Ma... |
| Features |
• High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF200150(R) MBRF200200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parame... |
| Document |
 MBRF200150 Data Sheet
PDF 470.84KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MBRF200150R |
GeneSiC |
Silicon Power Schottky Diode |
|
| 2 | MBRF200100 |
America Semiconductor |
Silicon Power Schottky Diode |
|
| 3 | MBRF200100 |
GeneSiC |
Silicon Power Schottky Diode |
|
| 4 | MBRF200100R |
America Semiconductor |
Silicon Power Schottky Diode |
|
| 5 | MBRF200100R |
GeneSiC |
Silicon Power Schottky Diode |
|