| No. | Partie # | Fabricant | Description | Fiche Technique |
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GTM |
SWITCHING DIODE ics at Ta = 25 Symbol VF IR Max 1.20 0.1 Unit V uA Test Condition IF = 100mA VR = 80V Characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt. 2. M |
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GTM |
SWITCHING DIODE verse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF(1) VF(2) IR CT Trr Min. 40 Typ. 5.0 10 Max. 370 600 5.0 Unit V mV mV A pF ns IR=10 A IF=20mA IF=200mA VR=30V VR=0V, f=1MHz IF=IR=200mA, IR(Rec)=20mA, RL=100 Test Conditions |
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GTM |
SWITCHING DIODE High reliability Small mode type Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum |
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