GME TIP fiche technique

No.	Partie #	Fabricant	Description
1	MM74C927	National	4-Digit Counters with Multiplexed 7-Segment Output Drivers Y Y Y Y Wide supply voltage range Guaranteed noise margin High noise immunity High segment sourcing current Internal multiplexing circuitry 3V to 6V 1V 0 45 VCC (typ ) 40 mA VCC b 1 6V VCC e 5V Y Design Considerations Segment resistors are desira
2	TIP32	GME	Epitaxial Planar PNP Transistor  Complementary to TIP31/31A/31B/31C. Pb Lead-free Production specification TIP32/32A/32B/32C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
3	TIP31	GME	Epitaxial Planar NPN Transistor  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
4	TIP41C	GME	Epitaxial Planar NPN Transistor z Complementary to TIP42C. Pb Lead-free Production specification TIP41C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC
5	TIP31B	GME	Epitaxial Planar NPN Transistor  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
6	TIP32C	GME	Epitaxial Planar PNP Transistor  Complementary to TIP31/31A/31B/31C. Pb Lead-free Production specification TIP32/32A/32B/32C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
7	MM74C926	National	4-Digit Counters with Multiplexed 7-Segment Output Drivers Y Y Y Y Wide supply voltage range Guaranteed noise margin High noise immunity High segment sourcing current Internal multiplexing circuitry 3V to 6V 1V 0 45 VCC (typ ) 40 mA VCC b 1 6V VCC e 5V Y Design Considerations Segment resistors are desira
8	TIP31A	GME	Epitaxial Planar NPN Transistor  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
9	TIP31C	GME	Epitaxial Planar NPN Transistor  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
10	TIP42C	GME	Epitaxial Planar PNP Transistor  Complementary to TIP41C. Pb Lead-free Production specification TIP42C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB
11	ADD3501	National Semiconductor	3 1/2 DIGIT DVM WITH MULTIPLEXED 7-SEGMENT OUTPUT
12	MM74C928	National	4-Digit Counters with Multiplexed 7-Segment Output Drivers Y Y Y Y Wide supply voltage range Guaranteed noise margin High noise immunity High segment sourcing current Internal multiplexing circuitry 3V to 6V 1V 0 45 VCC (typ ) 40 mA VCC b 1 6V VCC e 5V Y Design Considerations Segment resistors are desira
13	TIP112	GME	NPN Epitaxial Silicon Darlington Transistor  Monolithic Construction With Built in Base -Emitter Shunt Resistors.  Complementary to TIP117. Pb Lead-free  High DC Current Gain:hFE=1000@VCE=4V,IC=1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATING o
14	TIP117	GME	PNP Epitaxial Silicon Darlington Transistor  Monolithic Construction With Built in Base -Emitter Shunt Resistors. Pb Lead-free  Complementary to TIP112.  High DC Current Gain:hFE=1000@VCE=-4V,IC=-1A.  Low Collector-Emitter Saturation Voltage.  Industrial Use. TO-220AB MAXIMUM RATIN
15	ADD3701	National	Digital DVM with Multiplexed 7 Segment
16	TIP32A	GME	Epitaxial Planar PNP Transistor  Complementary to TIP31/31A/31B/31C. Pb Lead-free Production specification TIP32/32A/32B/32C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
17	TIP32B	GME	Epitaxial Planar PNP Transistor  Complementary to TIP31/31A/31B/31C. Pb Lead-free Production specification TIP32/32A/32B/32C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-E
18	TIP122	GME	NPN Epitaxial Silicon Darlington Transistor  Complementary to TIP127.  MSL 3 Pb Lead-free Production specification TIP122 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO
19	TIP127	GME	PNP Epitaxial Silicon Darlington Transistor  Complementary to TIP122. Pb Lead-free TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Vol