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TIP112 |
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| Part Number | TIP112 |
| Manufacturer | GME |
| Description | Production specification NPN Epitaxial Silicon Darlington Transisor TIP112 FEATURES Monolithic Construction With Built in Base -Emitter Shunt Resistors. Complementary to TIP117. Pb Lead-free ... |
| Features |
Monolithic Construction With Built in Base -Emitter Shunt Resistors. Complementary to TIP117. Pb Lead-free High DC Current Gain:hFE=1000@VCE=4V,IC=1A. Low Collector-Emitter Saturation Voltage. Industrial Use. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Crrent Collector Dissipation Junction and Storage Temperature Ta=25℃ TC=25℃ 100 V 5V 2 A 4 50 mA 2 W 50 -... |
| Document |
 TIP112 Data Sheet
PDF 205.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP110 |
INCHANGE |
NPN Transistor |
|
| 2 | TIP110 |
MCC |
Silicon NPN Darlington Power Transistor |
|
| 3 | TIP110 |
RECTRON |
Power Transistors |
|
| 4 | TIP110 |
Motorola |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | TIP110 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|