| No. | Partie # | Fabricant | Description | Fiche Technique |
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GME |
N-Channel Power Mosfet RDS(ON) =2.4Ω@ VGS = 10V Ultra low gate charge ( typical 15 nC ) Pb Lead-free Low reverse transfer Capacitance ( CRSS = typical 6.5 pF ) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness |
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GME |
N-Channel Power Mosfet RDS(ON) =17mΩ@ VGS = 10V,ID=20A High Current Capacity : ID=50A Low reverse current. Pb Lead-free Production specification BL50N60 TO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VG |
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GME |
N-Channel Power Mosfet Low on-resistance. Low leakage current. High speed switching. Low gate charge. Avalanche ratings. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Vol |
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BELLING |
LCD Segment Driver |
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