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BL5N50 |
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| Part Number | BL5N50 |
| Manufacturer | GME |
| Description | Production specification N-Channel Enhancement Mode Field Effect Transistor BL5N50 FEATURES Low on-resistance. Low leakage current. High speed switching. Low gate charge. Avalanche ratings. ... |
| Features |
Low on-resistance. Low leakage current. High speed switching. Low gate charge. Avalanche ratings. TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VDS Drain-Source Voltage 500 V VGS ID ID(pulse) IDR IDR(pulse) IAP Gate -Source Voltage Drain Current Drain Current(pulsed) Note1 Body-drain diode reverse drain current Body-drain diode reverse drain peak current(pulsed) Note1 Avalanche current Note3 ±30 5 20 5 20 5 V A A A A A Pch Channel dissipation Note2 30 W RθJA Channel to case Thermal Impedance 4.17 ℃/W... |
| Document |
 BL5N50 Data Sheet
PDF 364.71KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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