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GE |
NPN POWER TRANSISTORS • NPN complement to D45H PNP • Very Low collector saturation voltage • Excellent linearity • Fast switching NPN COLLECTOR EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - -:\~g\!:~~~rt I ,,004585((11..:3292)) ,26516, |
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Inchange Semiconductor |
Silicon NPN Power Transistor ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN |
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LGE |
Surface Mount Switching Diodes Fast switching speed. High conductance. For general purpose switching applications. Surface mount package ideally suited for automatic insertion. Applications For general purpose switching applications. Dimensions in inches and (millimeter |
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GE |
NPN POWER TRANSISTORS • NPN complement to D45H PNP • Very Low collector saturation voltage • Excellent linearity • Fast switching NPN COLLECTOR EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - -:\~g\!:~~~rt I ,,004585((11..:3292)) ,26516, |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes Top View .056 (1.43) .052 (1.33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. ♦ This diode is also available in other case styles including: the DO-35 case with the type designa |
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Inchange Semiconductor |
Silicon NPN Power Transistor stance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS M |
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LGE |
Surface Mount Fast Switching Diodes Fast switching speed. For general purpose switching application. Ultra-small surface mount package. High conductance. Applications For general purpose switching application. Dimensions in inches and (millimeters) Ordering Information Typ |
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Hitachi |
SYNC SIGNAL GENERATOR FOR TV CAMERAS |
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General Electric Solid State |
(D44VH1 - D44VH10) NPN Power Transistors |
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General Electric Solid State |
(D44VH1 - D44VH10) NPN Power Transistors |
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GE |
NPN POWER TRANSISTORS • Very Fast Switching ts :::;;; 500 ns resistive tf:::;;; 75 ns • Very Low VeE(sat):::;;; O.4V @ Ie = 4A • High Gain HFE ~ 40@ Ie =4A NPN COLLECTOR EMITIER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) . - - -:1~g\!:~~\~ 1 ..005 |
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INCHANGE |
NPN Transistor to Case 1.5 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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INCHANGE |
NPN Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICES Collector Cutoff Current VCE= 300V; VBE= 0 I |
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INCHANGE |
NPN Transistor /W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor D44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT |
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INCHANGE |
NPN Transistor mi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q1 D44Q3 D44Q5 IC= 10 |
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Hitachi Semiconductor |
SYNC SIGNAL GENERATOR |
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IXYS |
Medium Voltage Thyristor |
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Inchange Semiconductor |
Silicon NPN Power Transistors ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors D44C5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TY |
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IXYS Corporation |
(IXBD4410 / IXBD4411) ISOSMART Half Bridge Driver Chipset z z z z z z z z z z z z z z 1200 V or greater low-to-high side isolation. Drives Power Systems Operating on up to 575 V AC mains dv/dt immunity of greater than ±50V/ns Proprietary low-to-high side level translation and communication On-chip negat |
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