| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
20V P-Channel PowerTrench MOSFET • –4.5 A, –20 V. RDS(ON) = 47 mΩ @ VGS = –4.5 V RDS(ON) = 65 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • RDS(ON) rated for use with 1.8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • |
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Fairchild Semiconductor |
Dual 20V P-Channel PowerTrench MOSFET • –1.9 A, –20 V, RDS(ON) = 170 mΩ @ VGS = –10 V. RDS(ON) = 320 mΩ @ VGS = –4.5V. • Extended VGSS range (±20V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package G2 |
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