| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.197Ω (Typ.) Absolute Maximum Ratings S |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 20A, 200V • rDS(ON) = 0.180Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • |
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Fairchild Semiconductor |
N-Channel Power MOSFET • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve DRAIN |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V Low gate charge ( typical 87 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS IRFP Series ! S Absolute Maximum Ratings |
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Fairchild Semiconductor |
500V N-Channel MOSFET • • • • • • 20A, 500V, RDS(on) = 0.24Ω @VGS = 10 V Low gate charge ( typical 130nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS IRFP Series ! S Absolute Maximum Ratings S |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRFP150 |
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Fairchild Semiconductor |
N-channel Power MOSFET |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 40A, 100V • rDS(ON) = 0.055Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) Absolute Maximum Ratings S |
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Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.f |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components |
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Fairchild Semiconductor |
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.) Ο IRFP140 |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 14A, 500V • rDS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Sym |
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Fairchild Semiconductor |
Power MOSFET ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Low RDS(ON): 0.108Ω (Typ.) Absolute Maximum Ratings Sym |
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Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.f |
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Fairchild Semiconductor |
N-Channel MOSFET • 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 40A, 100V • rDS(ON) = 0.040Ω • UIS Rating Curve • SOA is Power Dissipation Limited • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMB |
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Fairchild Semiconductor |
RFP70N06 • 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components |
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Fairchild Semiconductor |
250V N-Channel MOSFET • • • • • • 16A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 47 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! TO-3P G DS IRFP Series ! S Absolute Maximum Ratings |
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