IRFP150A |
Part Number | IRFP150A |
Manufacturer | Fairchild Semiconductor |
Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leak... |
Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.)
Ο
IRFP150A
BVDSS = 100 V RDS(on) = 0.04 Ω ID = 43 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 43 30.4
1 O
Ο
Units V A A V mJ A mJ V/ns W W/ C
Ο
Continuous Drain Current (TC=100 C) Drain Cur... |
Document |
IRFP150A Data Sheet
PDF 261.24KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRFP150 |
IXYS Corporation |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE | |
2 | IRFP150 |
Harris |
N-Channel Power MOSFETs | |
3 | IRFP150 |
STMicroelectronics |
N-Channel MOSFET | |
4 | IRFP150 |
Vishay |
Power MOSFET | |
5 | IRFP150 |
Fairchild Semiconductor |
N-Channel Power MOSFET |