| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
PNP Low Saturation Transistor ce, Junction to Ambient 2 62.5 W °C/W Units © 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt749.lwpPrPC 7/10/98 revB FZT749 PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwi |
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Fairchild Semiconductor |
NPN General Purpose Amplifier V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 30 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, Ta = 150°C Min. 80 40 7.0 0.01 10 0.01 IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 |
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Fairchild Semiconductor |
PNP Low Saturation Transistor stance, Junction to Ambient 2 62.5 W °C/W Units © 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt790a.lwpPrPA 7/10/98 revB FZT790A PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless o |
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Fairchild Semiconductor |
NPN Low Saturation Transistor ce, Junction to Ambient 2 62.5 W °C/W Units © 1998 Fairchild Semiconductor Corporation Page 1 of 2 fzt649.lwpPrNC 7/10/98 revB FZT649 NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwi |
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