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FZT649 |
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| Part Number | FZT649 |
| Manufacturer | Fairchild Semiconductor |
| Description | FZT649 Discrete Power & Signal Technologies July 1998 FZT649 C E B C SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with colle... |
| Features |
ce, Junction to Ambient 2 62.5 W °C/W Units
© 1998 Fairchild Semiconductor Corporation
Page 1 of 2
fzt649.lwpPrNC 7/10/98 revB
FZT649
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V
nA uA nA... |
| Document |
 FZT649 Data Sheet
PDF 28.75KB |
| Distributor | Stock | Price | Buy |
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