Fairchild Semiconductor FPN fiche technique

No.	Partie #	Fabricant	Description
1	FPN330	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN330 / FPN330A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN330 / FPN330A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
2	FPN330	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN330 / FPN330A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN330 / FPN330A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
3	FPNH10	Fairchild Semiconductor	NPN RF Transistor therwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPNH10 350 2.8 125 357 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.
4	FPN630A	Fairchild Semiconductor	PNP Low Saturation Transistor nless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN630 / FPN630A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN630 / FPN6
5	FPN660A	Fairchild Semiconductor	PNP Low Saturation Transistor e noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IE = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 100mA, VCE = 2.0V IC = 500mA,
6	FPN430A	Fairchild Semiconductor	PNP Low Saturation Transistor nless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN430 / FPN430A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN430 / FPN4
7	FPN330A	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN330 / FPN330A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN330 / FPN330A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
8	FPN430	Fairchild Semiconductor	PNP Low Saturation Transistor nless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN430 / FPN430A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN430 / FPN4
9	FPN530	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN530 / FPN530A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN530 / FPN530A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
10	FPN530A	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN530 / FPN530A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN530 / FPN530A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
11	FPN560	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN560 / FPN560A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN560 / FPN560A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
12	FPN560A	Fairchild Semiconductor	NPN Low Saturation Transistor e, Junction to Case Thermal Resistance, Junction to Ambient Max FPN560 / FPN560A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN560 / FPN560A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbo
13	FPN630	Fairchild Semiconductor	PNP Low Saturation Transistor nless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN630 / FPN630A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN630 / FPN6
14	FPN660	Fairchild Semiconductor	PNP Low Saturation Transistor e noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IE = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 100mA, VCE = 2.0V IC = 500mA,