FPN660 |
Part Number | FPN660 |
Manufacturer | Fairchild Semiconductor |
Description | FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. • Sourced from... |
Features |
e noted
Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IE = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 100mA, VCE = 2.0V IC = 500mA, VCE = 2.0V IC = 1.0A, VCE = 2.0V IC = 2.0A, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA IC = 2.0A, IB = 200mA IC = 1.0A, IB = 100mA IC = 1.0A, VCE = 2.0V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5.0V, f = 100MHz 75 FPN660 FPN660A 70 100 250 80 40 FPN660 FPN660A Min. 55 80 60 5.0 100 10 100 Typ. Max. Units V ... |
Document |
FPN660 Data Sheet
PDF 57.30KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FPN660A |
Fairchild Semiconductor |
PNP Low Saturation Transistor | |
2 | FPN630 |
Fairchild Semiconductor |
PNP Low Saturation Transistor | |
3 | FPN630A |
Fairchild Semiconductor |
PNP Low Saturation Transistor | |
4 | FPN-02PG |
Fujikura |
Sensing element/Gauge | |
5 | FPN-02PGR |
Fujikura |
Sensing element/Gauge |