Fairchild Semiconductor FMB fiche technique

No.	Partie #	Fabricant	Description
1	FMB1020	Fairchild Semiconductor	NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
2	FMB200	Fairchild Semiconductor	PNP Multi-Chip General Purpose Amplifier Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMB200 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMB200 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Character
3	FMB2222A	Fairchild Semiconductor	NPN Amplifier 2222A — NPN Multi-Chip General-Purpose Amplifier Ordering Information Part Number FFB2222A FMB2222A MMPQ2222A Top Mark .1P .1P MMPQ2222A Package SC70 6L SSOT 6L SOIC 16L Packing Method Tape and Reel Tape and Reel Tape and Reel Absolute Maximum R
4	FMB2907A	Fairchild Semiconductor	PNP Multi-Chip General Purpose Amplifier e consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Ef
5	FMBA0656	Fairchild Semiconductor	NPN & PNP Complementary Dual Transistor ollector to Base Voltage Emitter to Base Voltage TA = 25°C unless otherwise noted Test Conditions Ic = 1.0 mA Ic = 100 uA Ie = 100 uA Min 80 80 4 Max Units V V V © 1997 Fairchild Semiconductor Corporation Page 1 of 2 fmba0656.lwpPr33&73(Y3)
6	FMB100	Fairchild Semiconductor	NPN Multi-Chip General Purpose Amplifier evice Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMB100 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMB100 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteris
7	FMB2227A	Fairchild Semiconductor	NPN & PNP Complementary Dual Transistor unless otherwise noted Test Conditions Ic = 10 mA Ic = 10 uA Ie = 10 uA Min 30 60 5 Max Units V V V © 1998 Fairchild Semiconductor Corporation Page 1 of 2 2227A.lwpPr19&63(Y1) FMB2227A NPN & PNP Complementary Dual Transistor (continued) El
8	FMB3904	Fairchild Semiconductor	NPN General Purpose Amplifier . The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance,
9	FMB3906	Fairchild Semiconductor	PNP Multi-Chip General Purpose Amplifier evice may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Cha
10	FMB3946	Fairchild Semiconductor	NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristics Total Device Dissipation Derate
11	FMB5551	Fairchild Semiconductor	NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package V, IC = 50mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VCB = 10V, f = 1MHz VCB = 0.5V, f = 1MHz VCE = 10V, IC = 10mA f = 100MHz VCE = 5V, IC = 200µA f = 1MHz, RS = 2kΩ, B = 200Hz VCE = 10V, IC = 1mA f = 1KHz 50 1
12	FMBA06	Fairchild Semiconductor	NPN Multi-Chip General Purpose Amplifier Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMBA06 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMBA06 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Character
13	FMBA14	Fairchild Semiconductor	NPN Multi-Chip Darlington Transistor Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMBA14 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMBA14 NPN Multi-Chip Darlington Transistor (continued) Electrical Characte
14	FMBA56	Fairchild Semiconductor	PNP Multi-Chip General Purpose Amplifier Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max FMBA56 700 5.6 180 Units mW mW/°C °C/W © 1998 Fairchild Semiconductor Corporation FMBA56 PNP Multi-Chip General Purpose Amplifier (continued) Electrical Character
15	FMBL1G300US60	Fairchild Semiconductor	Molding Type Module • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 300A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Applica
16	FMBS549	Fairchild Semiconductor	PNP Low Saturation Transistor Dissipation* Thermal Resistance, Junction to Ambient, total *Device mounted on a 1 in2 pad of 2 oz copper. Max 700 180 Units mW °C/W © 1999 Fairchild Semiconductor fmbs549.lwp Rev A PrPB FMBS549 PNP Low Saturation transistor (continued) Elect
17	FMBM5401	Fairchild Semiconductor	PNP General Purpose Amplifier tage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Conditions IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 IC = -10µA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, Ta = 100°C VEB =
18	FMBM5551	Fairchild Semiconductor	NPN General Purpose Amplifier onditions IC = 1mA, IB = 0 IC = 100µA, IE = 0 IC = 10µA, IC = 0 VCB = 120V VCB = 120V, Ta = 100°C VEB = 4V VCE = 5V, IC = 1mA hFE1(Die1)/hFE1(Die2) VCE = 5V, IC = 10mA hFE2(Die1)/hFE2(Die2) Min. 160 180 6 Max Units V V V 50 50 50 80 0.9 80 0.95 1
19	FMBL1G200US60	Fairchild Semiconductor	Molding Type Module • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Applica