FMBM5551 |
Part Number | FMBM5551 |
Manufacturer | Fairchild Semiconductor |
Description | FMBM5551 NPN General Purpose Amplifier April 2005 FMBM5551 NPN General Purpose Amplifier • This device has matched dies • Sourced from process 16. • See MMBT5551 for characteristics www.DataSheet4U... |
Features |
onditions
IC = 1mA, IB = 0 IC = 100µA, IE = 0 IC = 10µA, IC = 0 VCB = 120V VCB = 120V, Ta = 100°C VEB = 4V VCE = 5V, IC = 1mA hFE1(Die1)/hFE1(Die2) VCE = 5V, IC = 10mA hFE2(Die1)/hFE2(Die2)
Min.
160 180 6
Max
Units
V V V
50 50 50 80 0.9 80 0.95 1.1 250 1.05
nA µA nA
On Characteristics Variation Ratio of hFE1 Between Die 1 and Die 2 DC Current Gain Variation Ratio of hFE2 Between Die 1 and Die 2
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBM5551 Rev. D
FMBM5551 NPN General Purpose Amplifier
Electrical Characteristics (Continued)
Symbol
hFE3 DIVID3 VCE(sat) VB... |
Document |
FMBM5551 Data Sheet
PDF 193.99KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FMBM5401 |
Fairchild Semiconductor |
PNP General Purpose Amplifier | |
2 | FMB-22H |
Sanken electric |
Schottky Barrier Diodes 20V | |
3 | FMB-22L |
Sanken electric |
Schottky Barrier Diodes 20V | |
4 | FMB-2306 |
Sanken electric |
Schottky Diode | |
5 | FMB-24 |
Sanken electric |
Silicon Schottky Barrier Diode |