| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
360V PDP IGBT • • • • • High Current Capability Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A High Input Impedance Fast Switching RoHS Compliant General Description Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optim |
|
|
|
|
Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 320mJ at TJ = 25oC Logic Level Gate Drive Low Saturation Voltage Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications General Description The FGB3245G2_F085 |
|
|
|
|
Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB E CG Symbol G |
|
|
|
|
Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 330mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2015 Fai |
|
|
|
|
Fairchild Semiconductor |
N-Channel Ignition IGBT SCIS Energy = 335mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications www.DataSheet.co.kr Package GATE EMITTER COLLECTOR JEDEC TO- |
|
|
|
|
Fairchild Semiconductor |
Short Circuit Rated IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant April 2013 Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Using advanced NPT IGBT technology, Fairc |
|
|
|
|
Fairchild Semiconductor |
IGBT • High Current Capability • Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A • High Input Impedance tm Description Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica |
|
|
|
|
Fairchild Semiconductor |
400V N-Channel Logic Level IGBT VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V 6kV ESD Protected High Peak Current Density TO-252 (D-Pak) Low VGE(TH) General Description This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine i |
|
|
|
|
Fairchild Semiconductor |
IGBT • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =2.9 V @ IC = 5 A • 100% of the Parts tested for ILM(1) • High Input Impedance • RoHS Compliant Applications • Inrush current limitatio |
|