| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
P-Channel MOSFET Max rS1S2(on) = 126mΩ at VGS = –4.5V, IS1S2 = –1A Max rS1S2(on) = 141mΩ at VGS = –2.5V, IS1S2 = –1A Max rS1S2(on) = 198mΩ at VGS = –1.8V, IS1S2 = –1A Max rS1S2(on) = 303mΩ at VGS = –1.5V, IS1S2 = –1A Occupies only 1.5 mm2 of PCB area, less |
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Fairchild Semiconductor |
MOSFET Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A Occupies only 3 mm2 of PCB area Ultra- |
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Fairchild Semiconductor |
N-Channel MOSFET Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A Ultra-thin package: less than 0.85mm height when mounted to PCB Outstanding thermal transfer characteristics Ultra-low gate charge x rDS(on) product |
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Fairchild Semiconductor |
Integrated Load Switch Optimized for Low-Voltage Core ICs in Portable Systems Very Small Package Dimension: WLCSP 0.8 X 0.8 X 0.5 mm3 Current = 1.2 A, VIN Max. = 4 V Current = 2 A, VIN Max. = 4 V (Pulsed) RDS(on) = 80 mΩ at VON = VIN = 4 V RDS(on) = 85 mΩ at VO |
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Fairchild Semiconductor |
Integrated Load Switch Optimized for Low-Voltage Core ICs in Portable Systems Very Small Package Dimension: WLCSP 0.8 X 0.8 X 0.5 mm3 Current = 1.2 A, VIN max = 4 V Current = 2 A, VIN max = 4 V (Pulsed) RDS(on) = 80 mΩ at VON = VIN = 4 V RDS(on) = 85 mΩ at VON |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET •= –5.5 A, –20 V. RDS(ON) = 0.045 Ω=@ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V. •= Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6 •= Ultra-thin package: less than 0.70 mm height when mounted to PCB •= Outstanding thermal transfe |
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Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET •= 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. •= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. •= Ultra-thin package: less than 0.70 mm height when mounted to PCB. •= Outstanding thermal transfer character |
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Fairchild Semiconductor |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench • 9.6 A, 20 V. RDS(ON) = 14 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 2.5 V • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8. • Ultra-thin package: less than 0.80 mm height when mounted to PCB. • Outstanding thermal transfer characteristics: |
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Fairchild Semiconductor |
MOSFET Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 A Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 A Max rS1S2(on) = 28 m at VGS = 3.1 V, IS1S2 = 1 A Max rS1S2(on) = 33 m at VGS = 2.5 V, IS1S2 = 1 A Occupies only 2.2 mm2 of PCB area Ultra- |
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Fairchild Semiconductor |
P-Channel 1.7V PowerTrench WL-CSP MOSFET General Description Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA Ultra-thin pa |
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Fairchild Semiconductor |
Integrated Load Switch Optimized for Low-Voltage Core ICs in Portable Systems Very Small Package Dimension: WL-CSP 0.8 X 0.8 X 0.5 mm3 Current = 1.2 A, VIN max. = 4 V Current = 2 A, VIN max. = 4 V (Pulsed) RDS(ON) = 80 mΩ at VON = 0 V, VIN = 4 V RDS(ON) = 85 mΩ |
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Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET •= 9 A, 20 V. RDS(ON) = 0.018 Ω=@ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V. •= Occupies only 5 mm2 of PCB area. Only 55% of the area of SSOT-6 •= Ultra-thin package: less than 0.70 mm height when mounted to PCB •= Outstanding thermal transfer char |
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Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench BGA MOSFET • 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Ultra-low Qg x RDS(ON) figure-of-m |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench • –4.5 A, –20 V. RDS(ON) = 45 mΩ @ VGS = –4.5 V RDS(ON) = 75 mΩ @ VGS = –2.5 V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Ultra-low Qg x RDS(ON) figure |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench • –13 A, –20 V. RDS(ON) = 9.5 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • 0.65 mm ball pitch • 3.5 x 4 mm2 fo |
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Fairchild Semiconductor |
P-Channel 30 Volt PowerTrench • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • 3.5 x 4 mm2 footprint • High powe |
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Fairchild Semiconductor |
60V N-Channel PowerTrench BGA MOSFET • 4 A, 60 V. RDS(ON) = 80 mΩ @ VGS = 5 V • Occupies only 5 mm2 of PCB area: only 55% of the area of SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 |
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Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET •= –6 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V. •= Occupies only 0.10 cm2 of PCB area. 1/3 the area of SO-8. •= Ultra-thin package: less than 0.70 mm height when mounted to PCB. •= Outstanding thermal transfer char |
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Fairchild Semiconductor |
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench • –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 45 mΩ @ VGS = –2.5 V • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 • Ultra-thin package: less than 0.90 mm height when mounted to PCB • Outstanding thermal transfer characteristic |
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Fairchild Semiconductor |
N-Channel 2.5 V Specified PowerTrench BGA MOSFET • 6 A, 20 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V • Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Outstanding thermal transfer cha |
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