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Fairchild Semiconductor |
20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFE |
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Fairchild Semiconductor |
15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET • Low Gate Charge Requirement Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Ju |
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Fairchild Semiconductor |
N-Channel UltraFET Power MOSFET Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A Typ Qg(10) = 118nC at VGS = 10V Simulation Models -Temperature Compensated PSPICE and SABERTM Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature -TB334, “Guidelines for |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Former |
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Fairchild Semiconductor |
N-Channel MOSFET • rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82684 Applications • 4 |
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Fairchild Semiconductor |
27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Jun |
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Fairchild Semiconductor |
Diodes |
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Fairchild Semiconductor |
High Voltage General PurPose Diodes |
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Fairchild Semiconductor |
Ultra Fast Diodes |
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Fairchild Semiconductor |
Ultra Fast Diodes |
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Fairchild Semiconductor |
Information Only Data Sheet 0 mA 50 50 420 520 640 760 810 0.89 500 610 740 900 990 1.25 900 nA uA mV mV mV mV mV V ps VR = VR = IF IF IF IF IF IF = = = = = = TRR CT Reverse Recovery Time IF= IR = 10 mA IRR = 1.0 mA RLoop = 100 Ohm VR = 0 V, f = 1.0 MHz FDH700 - Rev. A D |
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Fairchild Semiconductor |
High Speed Switching Diodes |
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Fairchild Semiconductor |
500V N-Channel MOSFET • RDS(on) = 105 mΩ (Typ.) @ VGS = 10 V, ID = 22.5 A • Low Gate Charge (Typ. 105 nC) • Low Crss (Typ. 62 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description U |
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Fairchild Semiconductor |
N-Channel UltraFET Power MOSFET Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A Typ Qg(10) = 118nC at VGS = 10V Simulation Models -Temperature Compensated PSPICE and SABERTM Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature -TB334, “Guidelines for |
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Fairchild Semiconductor |
Silicon Diode |
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Fairchild Semiconductor |
N-Channel UniFET MOSFET • RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A • Low Gate Charge (Typ. 232 nC) • Low Crss (Typ. 262 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protect |
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Fairchild Semiconductor |
N-Channel MOSFET • 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistor |
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Fairchild Semiconductor |
Diode ommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress rat |
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Fairchild Semiconductor |
High Conductance Low Leakage Diode istic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max MMBD7000* 500 3.33 300 Units mW mW/°C °C/W ã 1997 Fairchild Semiconductor Corporation FDH3595 High Conductance Low Leakage Diode (continued) Electrical |
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