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FDH50N50_F133 |
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| Part Number | FDH50N50_F133 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 48A, 500V, RDS(on) = 0.105Ω @VGS = 10 V • Low gate charge ( typical 105 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppl... |
| Document |
 FDH50N50_F133 Data Sheet
PDF 438.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDH50N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 2 | FDH50N50 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FDH50N50 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FDH5500 |
Fairchild Semiconductor |
N-Channel UltraFET Power MOSFET |
|
| 5 | FDH5500_F085 |
Fairchild Semiconductor |
N-Channel UltraFET Power MOSFET |
|