Fairchild Semiconductor FCD fiche technique

No.	Partie #	Fabricant	Description
1	FCD9N60NTM	Fairchild Semiconductor	N-Channel MOSFET • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next gener
2	FCD810D	Fairchild Semiconductor	Optically-Coupled Isolator Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA=25°C Derate Linearly from 25°C 20V 50 V 25mA 150mW 2.0 mW/oC Package
3	FCD831B	Fairchild Semiconductor	Optically-Coupled Isolator S pulse width, 300 pps Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW 1.33 mW/oC Output Tranalator VeE Collector-to-Emitter Voltage VeB Collector-to-Base Voltage Ie Collector Current Po Power Dissiption at TA = 2
4	FCD1300N80Z	Fairchild Semiconductor	MOSFET • RDS(on) = 1.05 Typ.) • Ultra Low Gate Charge (Typ. Qg = 16.2 nC) • Low Eoss (Typ. 1.57 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 48.7 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications • AC
5	FCD825A	Fairchild Semiconductor	Optically-Coupled Isolator Current (1 P.s pulse width, 300 pps) Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0A 100mW Output Transistor VeE Collector-to-Emitter Voltage Vee Collector-to-Base Voltage Ie Collector Current = Po Power Dissipation at T
6	FCD825D	Fairchild Semiconductor	Optically-Coupled Isolator Current (1 P.s pulse width, 300 pps) Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0A 100mW Output Transistor VeE Collector-to-Emitter Voltage Vee Collector-to-Base Voltage Ie Collector Current = Po Power Dissipation at T
7	FCD825C	Fairchild Semiconductor	Optically-Coupled Isolator Current (1 P.s pulse width, 300 pps) Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0A 100mW Output Transistor VeE Collector-to-Emitter Voltage Vee Collector-to-Base Voltage Ie Collector Current = Po Power Dissipation at T
8	FCD830B	Fairchild Semiconductor	Optically-Coupled Isolator wer Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V BOmA 3.0A 100mW 1.33 mW/ °C Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA = 25°C Derate Linearly from 25
9	FCD831	Fairchild Semiconductor	Optically-Coupled Isolator S pulse width, 300 pps Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW 1.33 mW/oC Output Tranalator VeE Collector-to-Emitter Voltage VeB Collector-to-Base Voltage Ie Collector Current Po Power Dissiption at TA = 2
10	FCD810C	Fairchild Semiconductor	Optically-Coupled Isolator Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA=25°C Derate Linearly from 25°C 20V 50 V 25mA 150mW 2.0 mW/oC Package
11	FCD810B	Fairchild Semiconductor	Optically-Coupled Isolator Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA=25°C Derate Linearly from 25°C 20V 50 V 25mA 150mW 2.0 mW/oC Package
12	FCD810A	Fairchild Semiconductor	Optically-Coupled Isolator Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA=25°C Derate Linearly from 25°C 20V 50 V 25mA 150mW 2.0 mW/oC Package
13	FCD810	Fairchild Semiconductor	Optically-Coupled Isolator Derate Linearly from 25°C 3.0 V 60mA 3.0 A 100mW Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA=25°C Derate Linearly from 25°C 20V 50 V 25mA 150mW 2.0 mW/oC Package
14	FCD820	Fairchild Semiconductor	OPTICALLY-COUPLED ISOLATOR
15	FCD5N60	Fairchild Semiconductor	600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOS
16	FCD820B	Fairchild Semiconductor	Optically-Coupled Isolator from 25°C 3.3 mW/oC Input Diode VR Reverse Voltage 3.0 V IF Forward dc Current 60 rnA Ipk Peak Forward Current (1 jl.S pulse width, 300 pps) 3.0 A Po Power Dissipation at TA = 25°C 100mW Derate Linearly from 25°C 1.33 mW/oC Output Transi
17	FCD820D	Fairchild Semiconductor	Optically-Coupled Isolator from 25°C 3.3 mW/oC Input Diode VR Reverse Voltage 3.0 V IF Forward dc Current 60 rnA Ipk Peak Forward Current (1 jl.S pulse width, 300 pps) 3.0 A Po Power Dissipation at TA = 25°C 100mW Derate Linearly from 25°C 1.33 mW/oC Output Transi
18	FCD825	Fairchild Semiconductor	Optically-Coupled Isolator Current (1 P.s pulse width, 300 pps) Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0A 100mW Output Transistor VeE Collector-to-Emitter Voltage Vee Collector-to-Base Voltage Ie Collector Current = Po Power Dissipation at T
19	FCD825B	Fairchild Semiconductor	Optically-Coupled Isolator Current (1 P.s pulse width, 300 pps) Po Power Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V 60mA 3.0A 100mW Output Transistor VeE Collector-to-Emitter Voltage Vee Collector-to-Base Voltage Ie Collector Current = Po Power Dissipation at T
20	FCD830	Fairchild Semiconductor	Optically-Coupled Isolator wer Dissipation at TA = 25°C Derate Linearly from 25°C 3.0 V BOmA 3.0A 100mW 1.33 mW/ °C Output Transistor VCE Collector-to-Emitter Voltage Vce Collector-to-Base Voltage Ic Collector Current Po Power Dissipation at TA = 25°C Derate Linearly from 25