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FCD9N60NTM |
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| Part Number | FCD9N60NTM |
| Manufacturer | Fairchild Semiconductor |
| Description | The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By ut... |
| Features |
• RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra Low Gate Charge (Typ.Qg = 17.8nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant SupreMOSTM February 2010 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process control, SupreMOS provide world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS... |
| Document |
 FCD9N60NTM Data Sheet
PDF 796.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FCD900N60Z |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FCD1300N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 3 | FCD2250N80Z |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FCD2250N80Z |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FCD260N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|