| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-channel MOSFET ■ High density cell design for low RDS(ON). ■ Voltage controlled small signal switch. ■ Rugged and reliable. ■ High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted |
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Fairchild Semiconductor |
Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Low Thermal Resistance Using Ceramic Substrate • Dedicated Vs Pins Simplify PCB Layout • Separa |
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Fairchild Semiconductor |
Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 10 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Low-Loss, Short-Circuit Rated IGBTs • Low Thermal Resistance Using Ceramic Substrate • Dedicated Vs Pins Simplify PCB Layout • Separa |
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Fairchild Semiconductor |
Motion SPM 3 module • UL Certified No. E209204 (UL1557) • 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection • Built-In Thermal Shutdown Function • Low-Loss, Short-Circuit Rated IGBTs • Low Thermal Resistance Using Ceramic Substrate • Dedicated |
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