| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
Transistor F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB= |
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Fairchild Semiconductor |
Transistor Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA |
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Fairchild Semiconductor |
Transistor Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA |
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Fairchild Semiconductor |
NPN General Purpose Amplifier |
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Fairchild Semiconductor |
Transistor F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB= |
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Fairchild Semiconductor |
Transistor Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA |
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Fairchild Semiconductor |
Transistor F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB= |
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Fairchild Semiconductor |
PNP General Purpose Amplifier |
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Fairchild Semiconductor |
NPN General Purpose Amplifier = 32V, IE = 0, TA = 100°C IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V IC = 2.0mA, VCE = 5.0V f = 35MHz VCB = 10V, IE = 0, f = 1.0MHz IC = 0.2mA, VCE = 5.0V RS = 2.0kΩ, f = 1.0kHz BW = 200Hz 0.55 200 4.0 10 pF dB 200 Min. 32 3 |
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Fairchild Semiconductor |
NPN General Purpose Amplifier = 32V, IE = 0, TA = 100°C IC = 2.0mA, VCE = 5.0V IC = 10mA, IB = 0.5mA IC = 2.0mA, VCE = 5.0V IC = 2.0mA, VCE = 5.0V f = 35MHz VCB = 10V, IE = 0, f = 1.0MHz IC = 0.2mA, VCE = 5.0V RS = 2.0kΩ, f = 1.0kHz BW = 200Hz 0.55 200 4.0 10 pF dB 420 Min. 32 3 |
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Fairchild Semiconductor |
Transistor F Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product Noise Figure tON Turn On Time tOFF Turn Off Time IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB= |
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Fairchild Semiconductor |
PNP General Purpose Amplifier acteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 2 Max FSBCW30 500 4 250 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in of 2oz copper. © 1998 Fairchild Semiconductor C |
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Fairchild Semiconductor |
Transistor Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) Cob Base-Emitter On Voltage Output Capacitance IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA IC= -50mA, IB= -1.25mA IC= -10mA, IB= -0.25mA VCE= -5V, IC= -2mA |
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Fairchild Semiconductor |
PNP Transistor • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 100mA. • Sourced from process 68. 3 2 1 SOT-23 Mark: H1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25°C unle |
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Fairchild Semiconductor |
NPN General Purpose Amplifier C Thermal Resistance, Junction to Ambient Max *BCW65C 350 2.8 357 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. ã 1997 Fairchild Semiconductor Corporation BCW65C NPN General Purpose Amplifier (continued) Electrical Ch |
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Fairchild Semiconductor |
NPN General Purpose Amplifier ector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA IC = 10mA IE = 10µA VCB = 45V, IE = 0 VCB = 45V, IE = 0 VEB = 4V VCE = 10V, IC = 100µA VCE = 1V, |
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Fairchild Semiconductor |
PNP Amplifier and Storage Temperature Range -45 -60 -5 -800 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications invol |
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Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR .5mA IC=50mA, IB=2.5mA IC=2mA, VCE=5V VCE=5V, IC=10mA f=35MHz VCB=10V, IE=0 f=1MHz VCE=5V, IC=2.0mA RG=2KΩ , f=1KHz Min 50 45 45 5 110 0.21 0.85 0.6 300 4 10 0.75 100 220 0.25 Typ Max Unit V V V V nA V V V V MHz pF dB Rev. B © 1999 Fairchild Semico |
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Fairchild Semiconductor |
PNP General Purpose Amplifier .0mA, IB = 0 IC = -10µA, IE = 0 IC = -10µA, IC = 0 VCB = -20V, IE = 0 VCB = -20V, IE = 0, TA = +100°C VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -200µA RS = 2.0kΩ, f = 1.0kHz BW = 200Hz -0.6 120 Min. - |
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