BCW65C |
Part Number | BCW65C |
Manufacturer | Fairchild Semiconductor |
Description | BCW65C Discrete POWER & Signal Technologies BCW65C C E SOT-23 Mark: ED B NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to... |
Features |
C Thermal Resistance, Junction to Ambient
Max
*BCW65C 350 2.8 357
Units
mW mW/°C °C/W
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
ã 1997 Fairchild Semiconductor Corporation
BCW65C
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 µ A, IE = 0 IE = 1... |
Document |
BCW65C Data Sheet
PDF 37.18KB |
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---|---|---|---|---|
1 | BCW65 |
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