| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series D ! G! ● ◀▲ ● ● ! S Ab |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S |
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Fairchild Semiconductor |
Short Circuit Rated IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant September 2013 General Description Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-powe |
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Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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Fairchild Semiconductor |
IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A • High Input Impedance • Fast Switching : EOFF = 10 uJ/A • RoHS Compliant June 2014 General Description Using novel field stop IGBT technology, Fairchild’s new series o |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ.RDS(on) = 79 mΩ • Ultra Low Gate Charge ( Typ. Qg = 139 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) • 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation o |
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Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 132 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD / LED / PDP TV • Lighting • Un |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control September 2013 General Description Using advanced NPT IGBT technology, |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! |
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Fairchild Semiconductor |
MOSFET • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninter |
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Fairchild Semiconductor |
N-Channel MOSFET • RDS(on) = 360 mΩ (Typ.) @ VGS = 10 V, ID = 7.5 A • Low Gate Charge (Typ. 48.5 nC) • Low Crss (Typ. 23.6 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV and Monitor • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOS |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. Rds(on)=0.81Ω • Ultra low gate charge (typ. Qg=16nC) • Low effective output capacitance (typ. Coss.eff=32pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOS |
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Fairchild Semiconductor |
600V N-Channel MOSFET • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A • Low Gate Charge (Typ. 15 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s |
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Fairchild Semiconductor |
N-Channel MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated 10us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control Stptember 2013 General Description Using advanced NPT IGBT technology, F |
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Fairchild Semiconductor |
600V N-Channel MOSFET • • • • • • • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 9.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6) D ! " G! GD S ! " " " TO-22 |
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Fairchild Semiconductor |
N-Channel MOSFET • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect tran |
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Fairchild Semiconductor |
N-Channel MOSFET • 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2007 TM Description These N-Channel enhancement mode power fie |
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