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FDP15N65 |
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| Part Number | FDP15N65 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power... |
| Document |
 FDP15N65 Data Sheet
PDF 403.61KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDP15N40 |
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| 2 | FDP15N50 |
Fairchild Semiconductor |
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| 3 | FDP150N10 |
Fairchild Semiconductor |
N-Channel MOSFET |
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| 4 | FDP150N10 |
INCHANGE |
N-Channel MOSFET |
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| 5 | FDP150N10A |
Fairchild Semiconductor |
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